Systems and methods using mask pattern measurements performed with compensated light signals

ABSTRACT

A system includes a plate configured for mounting of a reflective extreme ultra-violet (EUV) mask thereon and a zone plate configured to divide EUV light into zero-order light and first-order light and to pass the zero-order light and the first-order light to the reflective EUV mask. The system further includes a detector configured to receive EUV light reflected by the EUV mask and including a zero-order light detection region configured to generate a first image signal and a first-order light detection region configured to generate a second image signal, and a calculator configured to generate a compensated third image signal from the first image signal and the second image signal. The third image signal may be used to determine a distance between mask patterns of the EUV mask.

CROSS-REFERENCE TO RELATED APPLICATION

This application claims priority under 35 USC § 119 to Korean PatentApplication No. 10-2018-0012802, filed on Feb. 1, 2018 in the KoreanIntellectual Property Office (KIPO), the contents of which are hereinincorporated by reference in their entirety.

BACKGROUND 1. Field of the Inventive Concept

The present inventive concept relates to semiconductor device processingapparatus and methods and, more particularly, to imaging apparatus andmethods for mask inspection and semiconductor device fabrication usingthe same.

2. Description of the Related Art

Recently, semiconductor devices have been miniaturized and have beenimproved in performance. As a result, an interval between the wiringsincluded in the semiconductor device becomes narrower and narrower. Asthe interval between the wirings included in the semiconductor devicebecomes narrower, the importance of inspection of a mask used forpatterning the wiring on the semiconductor substrate increases.

To inspect a mask on which a mask pattern is drawn, a light source witha short wavelength is desirable. Extreme ultra-violet (EUV) light may beused as a light source with short wavelength.

If a fluctuation occurs in an image signal including information on animage of a mask pattern, measurement of the interval between the maskpatterns may become inaccurate.

SUMMARY

Embodiments of the present inventive concept provide imaging systems andmethods using such systems capable of improving an accuracy of an imageof a reflective EUV mask

According to some embodiments of the present inventive concept, a systemincludes a plate configured for mounting of a reflective extremeultra-violet (EUV) mask thereon and a zone plate configured to divideEUV light into zero-order light and first-order light and to pass thezero-order light and the first-order light to the reflective EUV mask.The system further includes a detector configured to receive EUV lightreflected by the EUV mask and including a zero-order light detectionregion configured to generate a first image signal and a first-orderlight detection region configured to generate a second image signal, anda calculator configured to generate a compensated third image signalfrom the first image signal and the second image signal.

Further embodiments provide a system includes a plate configured formounting a reflective EUV mask thereon and a zone plate configured todivide EUV light into zero-order light and first-order light and to passthe zero-order light and the first-order light to the reflective EUVmask. The system further includes a detector configured to separatelydetect zero-order EUV light reflected by the EUV mask and first-orderEUV light reflected by the EUV mask.

According to some method embodiments, EUV light reflected from areflective EUV mask including first and second spaced-apart maskpatterns is detected. Respective first and second image signalscorresponding to zero-order light and first-order light reflected by theEUV mask are generated. A third image signal is generated from the firstand second image signals. A distance between the first mask pattern andthe second mask pattern is determined using the third image signal.Patterns are formed on a substrate using the reflective EUV mask.

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other aspects and features of the present inventiveconcept will become more apparent by describing in detail exemplaryembodiments thereof with reference to the attached drawings, in which:

FIG. 1 is a block diagram illustrating an imaging device and an imagingsystem including the same according to some embodiments of the presentinventive concept;

FIG. 2 is a diagram for explaining the imaging device and the imagesystem including the same according to some embodiments of the presentinventive concept;

FIG. 3 is an enlarged view of a region K of FIG. 2;

FIG. 4 is a diagram for explaining a detector of FIG. 2;

FIG. 5 is a graph for explaining an calculator of the imaging device andthe imaging system including the same according to some embodiments ofthe present inventive concept;

FIG. 6 is a diagram for explaining a determiner of FIG. 2;

FIG. 7 is a diagram for explaining the detector of FIG. 2;

FIG. 8 is a diagram for explaining the imaging device and the imagingsystem including the same according to some embodiments of the presentinventive concept;

FIG. 9 is a flowchart for explaining an imaging method using the imagingdevice and the imaging system including the same according to someembodiments of the present inventive concept;

FIG. 10 is a flowchart for explaining an imaging method using theimaging device and the imaging system including the same according tosome embodiments of the present inventive concept;

FIG. 11 is a flowchart for explaining an imaging method using theimaging device and the imaging system including the same according tosome embodiments of the present inventive concept;

FIG. 12 is a diagram for explaining a second region R2 which is ameasurement target region of the reflective EUV mask of FIG. 1 and thepatterning of the second region on the semiconductor substrate.

DETAILED DESCRIPTION OF THE EMBODIMENTS

Hereinafter, an imaging device and an imaging system including the sameaccording to some embodiments of the present inventive concept will bedescribed with reference to FIGS. 1 to 6.

FIG. 1 is a block diagram illustrating an imaging device and an imagingsystem including the same according to some embodiments of the presentinventive concept.

Referring to FIG. 1, an imaging system according to some embodiments ofthe present inventive concept may include an imaging device, acalculator 330, storage medium 340, and a determiner 350.

The imaging device may include a zone plate 315 and a detector 320.However, the present inventive concept is not limited thereto. Forexample, the imaging device may further include an EUV light source, anX-ray mirror, and the like, and details thereof will be described laterwith reference to FIG. 2.

The zone plate 315 may diffract the EUV light L. For example, the zoneplate 315 may separate the EUV light L into zero-order incident lightLi0 and first-order incident light Li1.

The zero-order incident light Li0 may be, for example, light which goesstraight from the zone plate 315. The first-order incident light Li1 maybe, for example, light diffracted by the zone plate 315. The first-orderincident light Li1 may proceed toward the plate (210 of FIG. 2) at acertain angle from the zone plate 315 on the basis of the zero-orderincident light Li0. The zone plate 315 may cause the first-orderincident light Li1 to be condensed on a measurement target region MTR ofthe reflective EUV mask 200. The reflective EUV mask 200 may be includedin an imaging system, for example, for defect inspection of thereflective EUV mask 200.

The zero-order reflected light Lr0 and the first-order reflected lightLr1 reflected from the plate (210 of FIG. 2) may enter the detector 320.For example, the zero-order reflected light Lr0 may be light obtained byreflection of the zero-order incident light Li0 from a region NMTR otherthan the measurement target region MTR of the reflective EUV mask 200.The first-order reflected light Lr1 may be light obtained by reflectionof first-order incident light Li1 from the measurement target region MTRof the reflective EUV mask 200.

The reflective EUV mask 200 may include a first region R1, a secondregion R2, a third region R3, a fourth region R4, and a fifth region R5.Detailed description of the first region R1, the second region R2, thethird region R3, the fourth region R4, and the fifth region R5 of thereflective EUV mask 200 h will be described later with reference to FIG.8.

The detector 320 may individually detect the zero-order reflected lightLr0 and the first-order reflected light Lr1. The detector 320 may outputa first image signal Io relating to the zero-order reflected light Lr0and a second image signal Isig relating to the first-order reflectedlight Lr1.

The calculator 330 may receive the first image signal Io and the secondimage signal Isig and may generate a third image signal Inorm. The thirdimage signal Inorm may be a signal in which the second image signal Isigis compensated using the first image signal Io.

The storage medium 340 may store the third image signal Inorm. Forexample, the storage medium 340 may store information on the third imagesignal Inorm for each of a plurality of regions of the reflective EUVmask 200 in the form of a matrix. For example, when the second region R2of the reflective EUV mask 200 is the measurement target region MTR, thestorage medium 340 may store the third image signal Inorm of the secondregion R2 in third row and second column of the matrix.

The determiner 350 may measure an interval between the mask patternsdrawn in one region of the reflective EUV mask 200 using the third imagesignal Inorm. In some embodiments, the determiner 350 may determine thepresence or absence of a defect of the reflective EUV mask 200 based onthe measured interval between the mask patterns.

For example, the reflective EUV mask 200 may include a plurality ofregions. The plurality of regions may include first, second, third,fourth and fifth regions R1, R2, R3, R4, R5. Each of the first, second,third, fourth and fifth regions R1, R2, R3, R4, R5 may include aplurality of mask patterns spaced apart from each other. For example,first and second mask patterns spaced apart from each other may be drawnin the second region R2 which is the measurement target region MTR. Thedeterminer 350 may measure the interval between the first and secondmask patterns, using the third image signal Inorm.

Some details of the above-mentioned contents will be described belowwith reference to FIGS. 2 to 6. However, for the sake of clarity ofexplanation, repeated description will be omitted or simplified.

FIG. 2 is a diagram for explaining an imaging device and an image systemincluding the same according to some embodiments of the presentinventive concept. FIG. 3 is an enlarged view of a region K of FIG. 2.FIG. 4 is a diagram for explaining the detector 320 of FIG. 2.

Referring to FIGS. 2 through 4, a reflective EUV mask 200 may bedisposed on the plate 210. The EUV light generator 300 may generate EUVincident light Li. The EUV light generator 300 may irradiate the X-raymirror 310 with EUV incident light Li.

The EUV incident light Li generated from the EUV light generator 300 maybe reflected after entering the X-ray mirror 310. The EUV incident lightLi may enter the X-ray mirror 310 at a first incident angle θ. The EUVincident light Li entering the X-ray mirror 310 at the first incidentangle θ may be reflected from the X-ray mirror 310. The EUV reflectedlight Lr may be reflected light of the EUV incident light Li from theX-ray mirror 310.

The X-ray mirror 310 may be, for example, spaced apart from the zoneplate 315. The X-ray mirror 310 may be disposed, for example, on thezone plate 315. However, the present inventive concept is not limitedthereto. For example, as long as the X-ray mirror 310 is disposed to beable to reflect the EUV incident light Li entering from the EUV lightgenerator 300 and to allow the EUV incident light Li to enter the zoneplate 315, the X-mirror 310 may be placed apart from the zone plate 315.

The EUV reflected light Lr may enter the zone plate 315. The EUV light Lof FIG. 1 may be EUV reflected light Lr.

The zone plate 315 separates the incident EUV reflected light Lr intothe zero-order incident light Li0 and the first-order incident light Li1and may irradiate the plate 210 with the separated incident light. Forexample, the zone plate 315 separates the incident EUV reflected lightLr into the zero-order incident light Li0 and the first-order incidentlight Li1, and may irradiate the reflective EUV mask 200 located on theplate 200 for defect inspection with the separated incident light. Thezone plate 315 may condense the first-order incident light Li1 on themeasurement target region MTR of the reflective EUV mask 200.

The zone plate 315 may be spaced apart from the plate 210. For example,the zone plate 315 may be placed on the plate 210. However, the presentinventive concept is not limited thereto. For example, as long as thezone plate 315 has an arrangement capable of condensing the first-orderincident light Li1 on the measurement target region MTR of thereflective EUV mask 200, the zone plate 315 may be placed apart from theplate 210, and other constituent elements may be disposed between thezone plate 315 and the plate 210.

The detector 320 may be spaced apart from the plate 210, the zone plate315 and the EUV light generator 300. The detector 320 may be disposed,for example, on the plate 210 to face the zone plate 315. However, thepresent inventive concept is not limited thereto. For example, as longas the detector 320 has an arrangement capable of detecting thezero-order reflected light Lr0 and the first-order reflected light Lr1,the detector 320 may be disposed such that it does not face the zoneplate 315.

The detector 320 may include a zero-order light detection region 321 anda first-order light detection region 323. The zero-order light detectionregion 321 of the detector 320 may detect the zero-order reflected lightLr0 among the zero-order reflected light Lr0 and the first-orderreflected light Lr1. The first-order light detection region 323 of thedetector 320 may detect the first-order reflected light Lr1 among thezero-order reflected light Lr0 and the first-order reflected light Lr1.

Specifically, the zero-order light detection region 321 of the detector320 may detect the zero-order reflected light Lr0 reflected from theregion NMTR outside of the measurement target region MTR of thereflective EUV mask 200. In other words, the zero-order reflected lightLr0 may enter the zero-order light detection region 321 of the detector320. The first-order light detection region 323 of the detector maydetect the first-order reflected light Lr1 reflected from themeasurement target region MTR of the reflective EUV mask 200. In otherwords, the first-order reflected light Lr1 may enter the first-orderlight detection region 323 of the detector 320.

In some embodiments, the first-order light detection region 323 of thedetector 320 may surround the zero-order light detection region 321 ofthe detector 320.

Separate probes may be connected to each of the zero-order lightdetection region 321 and the first-order light detection region 323 ofthe detector 320.

The first probe P1 may be connected to the zero-order light detectionregion 321 of the detector 320. The first probe P1 may output a firstimage signal Io relating to the zero-order reflected light Lr0. Sincethe zero-order reflected light Lr0 is light reflected from the regionNMTR other than the measurement target region of the reflective EUV mask200, the first image signal Io may not contain information on the imageof the measurement target region MTR of the reflective EUV mask 200.

The second probe P2 may be connected to the first-order light detectionregion 323 of the detector 320. The second probe P2 may output thesecond image signal Isig relating to the first-order reflected lightLr1. Since the first-order reflected light Lr1 is the light reflectedfrom the measurement target region MTR of the reflective EUV mask 200,the second image signal Isig may contain information on the image of themeasurement target region MTR of the reflective EUV mask 200.

FIG. 5 is a graph for explaining a calculator 330 of an imaging deviceand an imaging system including the same according to some embodimentsof the present inventive concept. An x-axis of the graph of FIG. 5 maybe a time (unit: AU (Arbitrary Unit)), and a y-axis may be an intensity(unit: AU).

Referring to FIGS. 2 and 5, the intensity of the second image signalIsig may be greater than the intensity of the first image signal Io. Inthe graph of FIG. 5, a first graph G1 may show the intensity of thefirst image signal Io. A second graph G2 may show the intensity of thesecond image signal Isig. A third graph G3 may show the intensity of thethird image signal Inorm.

The signals in each of the first graph G1 and the second graph G2 mayfluctuate. In other words, each of the first image signal Io and thesecond image signal Isig may not have a constant intensity. Fluctuationsof the signal of the first graph G1 may directly follow the fluctuationsof the signal of the second graph G2. In other words, the first graph G1and the second graph G2 may have different intensities but similarshapes. The fluctuation of the signals of the first graph G1 and thesecond graph G2 may be caused, for example, by a variation in a powersupply applied to the EUV light generator 300.

Since the second image signal Isig is a signal relating to thefirst-order reflected light Lr1 reflected from the measurement targetregion MTR of the reflective EUV mask 200, the second image signal Isigmay contain information on the image of the measurement target regionMTR of the reflective EUV mask 200.

The calculator 330 may receive input of the first image signal Io fromthe first probe P1, and may receive input the second image signal Isigfrom the second probe P2. The calculator 330 may generate the thirdimage signal Inorm. The calculator 330 may compensate the second imagesignal Isig based on the first image signal Io. The calculator 330 may,for example, divide the second image signal Isig by the first imagesignal Io to generate a third image signal Inorm, as in Formula I.

$\begin{matrix}{I_{norm}{= \frac{I_{sig}}{I_{o}}}} & \left( {{Formula}\mspace{14mu} 1} \right)\end{matrix}$

The third image signal Inorm may be a normalized signal. As shown in thethird graph G3, the intensity of the third image signal Inorm may beconstant. Further, the intensity of the third image signal Inorm may begreater than the intensity of the second image signal Isig and theintensity of the first image signal Io.

Since the third image signal Inorm is a normalized signal produced fromthe second image signal Isig, the third image signal Inorm may containinformation on the image of the measurement target region MTR of thereflective EUV mask 200. Therefore, the third image signal Inorm may beused to perform imaging of the measurement target region MTR of thereflective EUV mask 200 and to perform the defect inspection of themeasurement target region MTR of the reflective EUV mask 200. The thirdimage signal Inorm may be stored in the storage medium 340.

FIG. 6 is a diagram for explaining operations of the determiner 350 ofFIG. 2. Referring to FIGS. 2 and 6, the measurement target region MTR ofthe reflective EUV mask 200 may include a first mask pattern 401 and asecond mask pattern 403 spaced apart from each other.

A first separation region 411 may be a region between the first maskpattern 401 and the second mask pattern 403. The first separation region411 may have a first interval Dl. The first interval D1 may be aninterval between the first mask pattern 401 and the second mask pattern403. The first interval D1 may be a value to be measured by the imagingdevice and the imaging system including the same according to someembodiments of the present inventive concept. The imaging device and theimaging system including the same according to some embodiments of thepresent inventive concept may determine the presence of defects of thereflective EUV mask 200 to be inspected, using the measured firstinterval Dl.

For example, the determiner 350 may receive input of the third imagesignal Inorm. The determiner 350 may measure the interval between twopoints at which the third image signal Inorm crosses a threshold valueTH, and may obtain a value substantially similar to the first intervalD1 (for example, the first measured value M1). The threshold value THmay represent, for example, a certain current level. For example, thethird image signal Inorm may be an indirect current.

For example, in FIG. 6, a peak c_(sig) of the second image signal Isigand a peak c_(norm) of the third image signal Inorm may appear in thefirst separation region 411. Further, a valley t_(sig) of the secondimage signal Isig and a valley t_(norm) of the third image signal Inormmay be displayed in each of the first mask pattern 401 and the secondmask pattern 403.

Considering a case where the third image signal Inorm is used to measurethe first interval D1 as an example, to measure the first interval D1 ofthe first separation region 411, among the points at which the thirdimage signal Inorm crosses the threshold value TH, the interval betweenthe points at which the third image signal Inorm crosses the thresholdvalue TH on both sides of the peak c_(sig) may be measured. For example,among the points at which the third image signal Inorm crosses thethreshold value TH, the points at which the threshold value third imagesignal Inorm crosses the threshold value TH on both sides of the peakc_(sig), are labeled pn1 and pn2. Based on the third image signal Inorm,the first interval D1 may be determined as the first measured value M1.

Considering a case where the second image signal Isig is used to measurethe first interval D1 as an example, in order to measure the firstinterval D1 of the first separation region 411, among the points atwhich the second image signal Isig crosses the threshold value TH, theseparation between the points at which the threshold value TH meets thesecond image signal Isig on both sides around the peak c_(sig) may bemeasured. For example, among the points at which the second image signalIsig crosses the threshold value TH, the points at which the secondimage signal Isig crosses the threshold value TH on both sides aroundthe peak c_(sig) may labeled ps1 and ps2. According to the second imagesignal Isig, the first interval D1 may be determined as the secondmeasured value M2. The first measured value M1 may be substantially thesame as the first interval Dl. The second measured value M2 may besmaller than the first interval Dl.

An imaging device and the imaging system including the same according tosome embodiments of the present inventive concept may improve theaccuracy of the image of the reflective EUV mask 200, by detecting eachof the zero-order reflected light Lr0 and the first-order reflectedlight Lr1 reflected from the reflective EUV mask 200 and by utilizingthe reflected light for imaging of the measurement target region MTR ofthe reflective EUV mask 200.

By utilizing the third image signal Inorm obtained by compensating forthe second image signal Isig to image the measurement target region MTRof the reflective EUV mask 200, it is possible to obtain substantiallythe same measured value (e.g., the first measured value M1) as theinterval between the mask patterns (e.g., the first interval D1). Byperforming imaging on the reflective EUV mask 200 on the basis of theobtained measured value (e.g., the first measured value M1), theaccuracy of the image can be improved. Further, since substantially thesame measured value (e.g., the first measured value M1) as the intervalbetween the mask patterns (e.g., the first interval D1) is obtainedusing the third image signal Inorm, the reliability of the defectinspection of the reflective EUV mask 200 can be improved.

In some embodiments, the calculator 330 and the determiner 350 may beimplemented using software configured to execute on a data processingapparatus. Such software may include procedures and functions may beimplemented together with another software module that causes at leastone function or operation to be executed. The software code may beimplemented by a software application written in an appropriateprogramming language.

In some embodiments, the imaging device and the imaging system includingthe same may further include a display for displaying to the user atleast one of the first, second, and third image signals (Io, Isig,Inorm).

In the drawings, the imaging device and the imaging system including thesame are illustrated as including the EUV light generator 300, but thepresent inventive concept is not limited thereto. For example, the EUVlight generator 300 may, of course, be placed outside the imaging deviceand the imaging system including the same.

In the drawings, the imaging system is illustrated as including theX-ray mirror 310, the calculator 330, the storage medium 340 and thedeterminer 350, but the present inventive concept is not limitedthereto. For example, other constituent elements may be further includedand/or omitted as necessary.

Hereinafter, the detector 320 of the imaging device and an imagingsystem including the same according to some embodiments of the presentinventive concept will be described with reference to FIGS. 2, 3, and 7.For the sake of clarity of explanation, repeated description of elementsdescribed above will be omitted or simplified.

FIG. 7 is a diagram for explaining the detector 320 of FIG. 2. Referringto FIGS. 2, 3, and 7, unlike FIG. 2, the zero-order light detectionregion 321 of the detector 320 may include a plurality of zero-orderlight sub-detection regions. The plurality of zero-order lightsub-detection regions may include a first sub-detection region 321 a, asecond sub-detection region 321 b, a third sub-detection region 321 c,and a fourth sub-detection region 321 d.

Respective ones of a plurality of first sub-probes may be connected tothe plurality of zero-order light sub-detection regions. For example, asub-probe P1 a, a second sub-probe P1 b, a third sub-probe P1 c, and afourth sub-probe P1 d may be connected to each of a first sub-detectionregion 321 a, a second sub-detection region 321 b, a third sub-detectionregion 321 c, and a fourth sub-detection region 321 d. The firstsub-probe P1 a, the second sub-probe P1 b, the third sub-probe Plc, andthe fourth sub-probe P1 d may output a first sub-image signal boa, asecond sub-image signal Job, a third sub-image signal Ioc, and a fourthsub-image signal Iod, respectively.

When the zero-order reflected light Lr0 enters the zero-order lightdetection region 321, each of the plurality of first sub-probes mayoutput intensity of the zero-order reflected light Lr0 in each of theplurality of zero-order light sub-detection regions. For example, thefirst sub-image signal Ioa, the second sub-image signal Job, the thirdsub-image signal Ioc, and the fourth sub-image signal Iod may be relatedto the zero-order reflected light Lr0 in each of the first sub-detectionregion 321 a, the second sub-detection region 321 b, the thirdsub-detection region 321 c, and the fourth sub-detection region 321 d,when the zero-order reflected light Lro enters the zero-order lightdetection region 321.

In some embodiments, when the EUV light generator 300, the X-ray mirror310 and the zone plate 315 are aligned, intensities of the zero-orderreflected light Lr0 in each of the first sub-detection region 321 a, thesecond sub-detection region 321 b, the third sub-detection region 321 c,and the fourth sub-detection region 321 d may be the same. Here, thecase where the EUV light generator 300, the X-ray mirror 310, and thezone plate 315 are aligned may mean a case where the first-orderincident light Li1 is condensed on the measurement target region MRT ofthe reflective EUV mask 200.

For example, FIG. 2 illustrates a case where the EUV light generator300, the X-ray mirror 310 and the zone plate 315 are aligned. When theEUV incident light Li enters the X-ray mirror 310 at the first incidentangle θ, intensities of each of the first sub image signal Ioa, thesecond sub image signal Iob, the third sub-image signal Ioc, and thefourth sub-image signal Iod may be the same.

When the EUV light generator 300, the X-ray mirror 310 and the zoneplate 315 are misaligned, intensity of the zero-order reflected lightLr0 in each of the first sub-detection region 321 a, the secondsub-detection region 321 b, the third sub-detection region 321 c and thefourth sub-detection region 321 d may not be the same. For example, theintensity of the zero-order reflected light Lr0 in each of the firstsub-detection region 321 a and the second sub-detection region 321 b maybe greater than the intensity of the zero-order reflected light Lr0 ineach of the third sub-detection region 321 c and the fourthsub-detection region 321 d. This may mean that the EUV light generator300 is moved to the side of the first sub-detection region 321 a and thesecond sub-detection region 321 b. By comparing the intensities of thezero-order reflected light Lr0 in each sub-detection region to grasp thedirection of movement of the EUV light generator 300, it is possible todetermine an optimum incident angle for condensing the first-orderincident light Li1 in the measurement target region MTR of thereflective EUV mask 200. Here, the incident angle may be an incidentangle which enters the X-ray mirror 310 from the EUV light generator300.

In some embodiments, when the EUV light generator 300, the X-ray mirror310 and the zone plate 315 are aligned, the intensity of the zero-orderreflected light Lr0 in each of the first sub-detection region 321 a, thesecond sub-detection region 321 b, the third sub-detection region 321 cand the fourth sub-detection region 321 d may have a maximum value.

For example, when the EUV incident light Li enters the X-ray mirror 310at the first incident angle θ, intensities of each the first sub-imagesignal Ioa, the second sub-image signal Iob, the third sub-image signalIoc, and the fourth sub-image signal Iod may have maximum values. Inother words, the first incident angle θ may be the incident angle wheneach of the first sub-image signal Ioa, the second sub-image signal Iob,the third sub-image signal Ioc, and the fourth sub-image signal Iodmeasured from each of the first sub-detection region 321 a, the secondsub-detection region 321 b, the third sub-detection region 321 c, andthe fourth sub-detection region 321 d has the maximum value.

Hereinafter, the imaging device and the imaging system including thesame according to some embodiments of the present inventive concept willbe described with reference to FIGS. 1, 2, and 8. For the sake ofclarity of explanation, the repeated description of items describedabove will be omitted or simplified.

FIG. 8 is a diagram for explaining the imaging device and the imagingsystem including the same according to some embodiments of the presentinventive concept. Referring to FIGS. 1, 2 and 8, the imaging device andthe imaging system including the same may be moved in a first directionx and a second direction y to scan all the regions of the reflective EUVmask 200.

In some embodiments, the plate 210 on which the reflective EUV mask 200is located may move. The reflective EUV mask 200 may include a firstregion R1, a second region R2, a third region R3, a fourth region R4,and a fifth region R5. The first region R1, the second region R2 and thethird region R3 may be regions disposed along the first direction x. Thefirst region R1 and the fourth region R4 may be regions disposed alongthe second direction y. The second region R2 and the fifth region R5 maybe regions disposed along the second direction y.

In FIG. 8, the reflective EUV mask 200 may be represented by a 7×7matrix. The measurement target region MTR of the reflective EUV mask 200may be the second region R2. The first region R1, the third region R3,the fourth region R4, and the fifth region R5 may be regions NMTR otherthan the measurement target region. The zero-order reflected light Lr0reflected from the region NMTR other than the measurement target regionand the first-order reflected light Lr1 reflected from the second regionR2 may be detected by the detector 320.

The calculator 330 receives the first image signal Io relating to thezero-order reflected light Lr0 and the second image signal Isig relatingto the first-order reflected light Lr1, and may generate the third imagesignal Inorm. The generated third image signal Inorm may be stored inthe storage medium 340. The output of the calculator 330 for each ofregion of the reflective EUV mask 200 may be stored in the storagemedium 340 in a matrix format, e.g., the third image signal Inorm may bestored in the third row and second column of the matrix.

The plate 210 is moved in the first direction x, and the measurementtarget region MTR of the reflective EUV mask 200 may be the third regionR3. The first region R1, the second region R2, the fourth region R4 andthe fifth region R5 may be the regions NMTR other than the measurementtarget region. The zero-order reflected light Lr0 reflected from theregions NMTR other than the measurement target region and thefirst-order reflected light Lr1 reflected from the third region R3 maybe detected by the detector 320.

The calculator 330 may receive the fourth image signal Io2 relating tothe zero-order reflected light Lr0 and the fifth image signal Isig2relating to the first-order reflected light Lr1, and may generate asixth image signal Inorm2. The generated sixth image signal Inorm2 maybe stored in the storage medium 340. The sixth image signal Inorm2 maybe stored in the fourth row and second column of the matrix.

In some embodiments, after the plate 210 moves in the first direction x,when all the regions of the reflective EUV mask 200 of one row arescanned, the plate 210 may move in the second direction y. The plate 210is moved in the second direction y, and the measurement target regionMTR of the reflective EUV mask 200 may be the fifth region R5. The firstregion R1, the second region R2, the third region R3, and the fourthregion R4 may be the regions NMTR other than the measurement targetregion. The zero-order reflected light Lr0 reflected from the regionsNMTR other than the measurement target region and the first-orderreflected light Lr1 reflected from the fifth region R5 may be detectedby the detector 320.

The calculator 330 receives a seventh image signal Io3 relating to thezero-order reflected light Lr0 and an eighth image signal Isig3 relatingto the first-order reflected light Lr1, and may generate a ninth imagesignal Inorm3. The generated ninth image signal Inorm3 may be stored inthe storage medium 340. The ninth image signal Inorm3 may be stored inthe third row and third column of the matrix. The imaging device and theimaging system including the same may scan all regions of the reflectiveEUV mask 200 to obtain compensated signals (e.g., third, sixth and ninthimage signals (Inorm, Inorm 2, Inorm 3)) for each region.

The matrix stored in the storage medium 340 may be analyzed by thedeterminer 350. The determiner 350 measures the interval between maskpatterns drawn on the reflective EUV mask 200 on the basis of the loadedmatrix and may detect defects in the reflective EUV mask 200.

Hereinafter, an imaging method using the imaging device and the imagingsystem including the same according to some embodiments of the presentinventive concept will be described with reference to FIG. 9. For thesake of clarity of explanation, the repeated description of itemsdescribed above will be omitted or simplified.

FIG. 9 is a flowchart for explaining an imaging method using the imagingdevice and the imaging system including the same according to someembodiments of the present inventive concept. Referring to FIG. 9, instep (S1010), the EUV light is divided into zero-order incident lightand first-order incident light and may enter the reflective EUV mask.For example, the zone plate (315 of FIG. 2) divides the EUV light (EUVreflected light (Lr) of FIG. 2)) into the zero-order incident light (Li0of FIG. 2) and the first-order incident light (Li1 of FIG. 2), and maycause the divided light to enter the reflective EUV mask (200 of FIG.2).

In step (S1030), each of the zero-order reflected light and thefirst-order reflected light reflected from the reflective EUV mask maybe separately detected. For example, the detector (320 of FIG. 2) mayseparately detect the zero-order reflected light (Lr0 of FIG. 2) and thefirst-order reflected light (Lr1 of FIG. 2).

In step (S1050), a third image signal may be generated. For example, thecalculator (330 of FIG. 2) may generate a third image signal (Inorm ofFIG. 2) obtained by compensating for the second image signal (Isig ofFIG. 2) relating to the first-order reflected light (Lr1 of FIG. 2),using the first image signal (Io of FIG. 2) relating to the zero-orderreflected light (Lr0 of FIG. 2).

Hereinafter, the imaging method using the imaging device and the imagingsystem including the same according to some embodiments of the presentinventive concept will be described with reference to FIG. 10. For thesake of clarity of explanation, repeated description of items describedabove will be omitted or simplified.

FIG. 10 is a flowchart for explaining an imaging method using theimaging device and the imaging system including the same according tosome embodiments of the present inventive concept. Referring to FIG. 10,in step (S2010), the X-ray mirror may reflect the EUV light incidentfrom the EUV light generator at the first incident angle.

In step (S2030), the EUV light reflected by the X-ray mirror is dividedinto the zero-order incident light and the first-order incident lightand may enter the reflective EUV mask. For example, the zone plate (315of FIG. 2) divides the EUV light (EUV reflected light (Lr of FIG. 2))into the zero-order incident light (Li0 of FIG. 2) and the first-orderincident light (Li1 of FIG. 2), and may cause the divided light to enterthe reflective EUV mask (200 of FIG. 2). Step (S2050) may be the same asstep (S1030). Step (S2070) may be the same as step (S1050). Therefore,further description of steps (S2050) and (S2070) will be omitted.

In step (S2090), when the EUV light generator and the X-ray mirror aremisaligned, the first incident angle may be determined again. Forexample, the zero-order light detection region (321 of FIG. 7) of thedetector (320 of FIG. 7) may include a plurality of zero-order lightsub-detection regions. When the detector (320 of FIG. 7) including aplurality of zero-order light sub-detection regions is used, theintensity of the zero-order reflected light may be measured in each ofthe plurality of zero-order light sub-detection regions. By comparingthe measured intensities, the direction in which the EUV light generatoris moved can be obtained. Also, by realigning the EUV light generatorand the X-ray mirror on the basis of the direction in which the EUVlight generator is moved, the first incident angle can be determinedagain. Details on this have been described above with reference to FIG.7.

Hereinafter, a method for fabricating a semiconductor device using theimaging device and the imaging system including the same according tosome embodiments of the present inventive concept will be described withreference to FIGS. 1, 11, and 12. For the sake of clarity ofexplanation, repeated description of items described above will beomitted or simplified.

FIG. 11 is a flowchart for explaining an imaging method using theimaging device and the imaging system including the same according tosome embodiments of the present inventive concept. FIG. 12 is a diagramillustrating the second region R2 which is the measurement target regionMTR of the reflective EUV mask 200 of FIG. 1, and patterning of thesecond region R2 on the semiconductor substrate 100.

Referring to FIGS. 11 and 12, in step (S3010), the EUV light may bedivided into the zero-order incident light and the first-order incidentlight and may enter the reflective EUV mask. For example, the zone plate(315 of FIG. 2) divides the EUV light (EUV reflected light (Lr of FIG.2)) into the zero-order incident light (Li0 of FIG. 2) and thefirst-order incident light (Li1 of FIG. 2), and may cause the dividedlight to enter the reflective EUV mask 200. The second region R2 of thereflective EUV mask 200 may include a first mask pattern 401 and asecond mask pattern 403 that are spaced apart from each other.

Step (S3030) may be the same as step (S1030). Step (S3050) may be thesame as step (S1050). Therefore, further description of steps (S3030)and steps (S3050) will be omitted.

In step (S3070), the interval between the first mask pattern 401 and thesecond mask pattern 403 may be measured, using the third image signal.For example, the determiner (350 of FIG. 2) may measure the firstinterval (D1 of FIG. 6) between the first mask pattern 401 and thesecond mask pattern 403, using the threshold value (TH of FIG. 6) andthe third image signal (Inorm of FIG. 6). In step (S3070), it ispossible to determine whether a defect in the reflective EUV mask ispresent by measuring the interval between the first mask pattern 401 andthe second mask pattern 403.

In step (S3090), the first pattern 501 and the second pattern 503 may bepatterned on the semiconductor substrate 100, using a reflective EUVmask. That is, it is possible to perform the step in which, before thepatterns (for example, the first mask pattern 401 and the second maskpattern 403) drawn on the reflective EUV mask are patterned on thesemiconductor substrate 100, the third image signal (Inorm of FIG. 2) isobtained, and the interval between the first mask pattern 401 and thesecond mask pattern 403 is measured using the third image signal (Inormof FIG. 2).

The semiconductor substrate 100 may be bulk silicon orsilicon-on-insulator (SOI). In contrast, the semiconductor substrate 100may be a silicon substrate or may contain other materials, for example,such as silicon germanium, silicon germanium on insulator (SGOI), indiumantimonide, lead tellurium compound, indium arsenide, indium phosphorus,gallium arsenide or gallium antimonide, but are not limited thereto. Forexample, the semiconductor substrate 100 may refer to a wafer.

The first pattern 501 may be a pattern corresponding to the first maskpattern 401 of the reflective EUV mask. The second pattern 503 may be apattern corresponding to the second mask pattern 403 of the reflectiveEUV mask. The recess 511 may be a region corresponding to the firstseparation region 411 of the reflective EUV mask.

In concluding the detailed description, those skilled in the art willappreciate that many variations and modifications can be made to thepreferred embodiments without substantially departing from theprinciples of the present inventive concept. Therefore, the disclosedpreferred embodiments of the inventive concept are used in a generic anddescriptive sense only and not for purposes of limitation.

While the present inventive concept has been particularly shown anddescribed with reference to exemplary embodiments thereof, it will beunderstood by those of ordinary skill in the art that various changes inform and details may be made therein without departing from the spiritand scope of the present inventive concept as defined by the followingclaims. It is therefore desired that the present embodiments beconsidered in all respects as illustrative and not restrictive,reference being made to the appended claims rather than the foregoingdescription to indicate the scope of the invention.

1-20. (canceled)
 21. A method comprising: detecting EUV light reflectedfrom a reflective EUV mask including first and second spaced apart maskpatterns; generating respective first and second image signalscorresponding to zero-order light and first-order light reflected by theEUV mask; generating a third image signal from the first and secondimage signals; determining a distance between the first mask pattern andthe second mask pattern using the third image signal; and formingpatterns on a substrate using the reflective EUV mask.
 22. The method ofclaim 21, wherein generating the third image signal comprises dividingthe second image signal by the first image signal.
 23. The method ofclaim 21, wherein an intensity of the second image signal is greaterthan an intensity of the first image signal.
 24. The method of claim 21,wherein the first and second mask patterns are formed in a measurementtarget region of the reflective EUV mask, and wherein the second imagesignal comprises information for the measurement target region.
 25. Themethod of claim 21, wherein generating respective first and second imagesignals corresponding to zero-order light and first-order lightreflected by the EUV mask comprises generating the first image signalfrom a zero-order light detection region of a detector and generatingthe second image signal from a first-order light detection region of thedetector.
 26. The method of claim 25, wherein generating the first imagesignal from the zero-order light detection region comprises generatingthe first image signal using a first probe connected to the zero-orderlight detection region, wherein generating the second image signal fromthe first-order light detection region comprises generating the secondimage signal using a second probe connected to the first-order lightdetection region.
 27. The method of claim 21, further comprising:reflecting EUV light incident produced by an EUV light generator using aX-ray mirror; and dividing the reflected EUV light into zero-order lightand first-order light; and directing the zero-order light andfirst-order light to the reflective EUV mask.
 28. The method of claim27, wherein generating respective first and second image signalscorresponding to zero-order light and first-order light reflected by theEUV mask comprises obtaining a plurality of first image signals fromrespective zero-order light detection subregions of a zero-order lightdetection region of a detector and obtaining the second image signalfrom a first-order light detection region of the detector, and whereinthe method further comprises determining an angle of incidence ofzero-order reflected light reflected by the X-ray mirror.